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Active and Passive Electronic Components
Volume 2012 (2012), Article ID 148705, 10 pages
http://dx.doi.org/10.1155/2012/148705
Research Article

Comprehension of Postmetallization Annealed MOCVD- on Treated III-V Semiconductors

Department of Electronic Engineering, Chung Yuan Christian University, Chung Li City 32023, Taiwan

Received 9 October 2012; Accepted 14 November 2012

Academic Editor: Kuan-Wei Lee

Copyright © 2012 Ming-Kwei Lee and Chih-Feng Yen. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

The electrical characteristics of TiO2 films grown on III-V semiconductors (e.g., p-type InP and GaAs) by metal-organic chemical vapor deposition were studied. With (NH4)2S treatment, the electrical characteristics of MOS capacitors are improved due to the reduction of native oxides. The electrical characteristics can be further improved by the postmetallization annealing, which causes hydrogen atomic ion to passivate defects and the grain boundary of polycrystalline TiO2 films. For postmetallization annealed TiO2 on (NH4)2S treated InP MOS, the leakage current densities can reach and  A/cm2 at  MV/cm, respectively. The dielectric constant and effective oxide charges are 46 and  C/cm2, respectively. The interface state density is  cm−2 eV−1 at the energy of 0.67 eV from the edge of valence band. For postmetallization annealed TiO2 on (NH4)2S treated GaAs MOS, The leakage current densities can reach and at  MV/cm, respectively. The dielectric constant and effective oxide charges are 66 and  C/cm2, respectively. The interface state density is  cm−2 eV−1 at the energy of 0.7 eV from the edge of valence band.