Research Article

Comprehension of Postmetallization Annealed MOCVD- on Treated III-V Semiconductors

Figure 14

hysteresis loops of (a) TiO2/S-GaAs, (b) PMA at 300°C, (c) PMA at 350°C, and (d) PMA at 400°C.
148705.fig.0014a
(a)
148705.fig.0014b
(b)