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</svg>
 Treated III-V Semiconductors

<table><svg height="11.75" id="M127" style="vertical-align:-0.23206pt" version="1.1" viewbox="0 0 30.775 11.75" width="30.775" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
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<g transform="matrix(.017,-0,0,-.017,18.1,11.4)"><path d="M730 650l-8 -28q-52 -4 -72 -18t-64 -77q-79 -113 -321 -539h-33l-119 541q-13 59 -29.5 73t-66.5 20l7 28h245l-8 -28l-28 -5q-33 -6 -40.5 -15.5t-0.5 -38.5l102 -450h2q191 320 246 430q21 42 15.5 56t-43.5 19l-31 4l7 28h240z" id="x1D449"></path></g>
</svg> characteristics of TiO<sub>2</sub>/InP with and without <svg height="16.862499" id="M128" style="vertical-align:-3.7538pt" version="1.1" viewbox="0 0 58.262501 16.862499" width="58.262501" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
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<g transform="matrix(.017,-0,0,-.017,5.95,12.138)"><path d="M719 650v-28q-43 -2 -62 -15t-22 -44q-6 -47 -6 -169v-403h-31l-426 524h-2v-251q0 -111 6 -169q4 -37 24 -50.5t72 -16.5v-28h-237v28q45 2 64.5 16t23.5 49q6 62 6 171v220q0 54 -3 68.5t-17 32.5q-16 19 -34.5 26.5t-54.5 10.5v28h147l418 -502h3v246q0 117 -7 166
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<g transform="matrix(.012,-0,0,-.012,31.6,16.212)"><path d="M456 178h-96v-72q0 -51 12.5 -62.5t72.5 -16.5v-27h-256v27q65 5 78 17t13 62v72h-260v28q182 271 300 426h40v-407h96v-47zM280 225v295h-2q-107 -148 -196 -295h198z" id="x34"></path></g>
<g transform="matrix(.017,-0,0,-.017,37.925,12.138)"><path d="M275 270q0 -296 -211 -440l-19 23q75 62 116.5 174t41.5 243t-42 243t-116 173l19 24q211 -144 211 -440z" id="x29"></path></g>
<g transform="matrix(.012,-0,0,-.012,43.812,16.8)"><path d="M412 140l28 -9q0 -2 -35 -131h-373v23q112 112 161 170q59 70 92 127t33 115q0 63 -31 98t-86 35q-75 0 -137 -93l-22 20l57 81q55 59 135 59q69 0 118.5 -46.5t49.5 -122.5q0 -62 -29.5 -114t-102.5 -130l-141 -149h186q42 0 58.5 10.5t38.5 56.5z" id="x32"></path></g>
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</svg> treatments and PMA-TiO<sub>2</sub>/S-InP at different PMA temperatures.</table>

Active and Passive Electronic Components

fig8

Figure 8

Figure 8: Comprehension of Postmetallization Annealed MOCVD-<svg     style="vertical-align:-4.32007pt;width:42.962502px;" id="M1" height="20.637501" version="1.1" viewBox="0 0 42.962502 20.637501" width="42.962502"  xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg">
	
		
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</svg>
 Treated III-V Semiconductors 

Figure 8 | Comprehension of Postmetallization Annealed MOCVD-
	
		
			

			

		
	
 on 
	
		
			

			

			

			

			

		
	

 Treated III-V Semiconductors 

Active and Passive Electronic Components

Comprehension of Postmetallization Annealed MOCVD- on Treated III-V Semiconductors

Figure 8