Table 1: Electrical characteristics by PMA(350°C)-TiO2/InP and PMA(350°C)-TiO2/GaAs.

MOS structures Dielectric constant Leakage current at 1 MV/cm Interface state density of hysteresis loop PMA(350°C)-TiO2/S-InP 44 2.7 × 10−7 and 2.3 × 10−7 A/cm2 7.13 × 1011 cm−2 eV−1 17 mV PMA(350°C)-TiO2/S-GaAs 66 9.7 × 10−8 and 1.4 × 10−7 5.96 × 1011 cm−2 eV−1 9 mV