Table 1: Electrical characteristics by PMA(350°C)-TiO2/InP and PMA(350°C)-TiO2/GaAs.

MOS structuresDielectric constantLeakage current at 1 MV/cmInterface state density of hysteresis loop

PMA(350°C)-TiO2/S-InP442.7 × 10−7 and 2.3 × 10−7 A/cm27.13 × 1011 cm−2 eV−117 mV
PMA(350°C)-TiO2/S-GaAs669.7 × 10−8 and 1.4 × 10−75.96 × 1011 cm−2 eV−19 mV