Comprehension of Postmetallization Annealed MOCVD-TiO_𝟐 on (NH_𝟒)_𝟐S Treated III-V Semiconductors

Table 1

Electrical characteristics by PMA(350°C)-TiO₂/InP and PMA(350°C)-TiO₂/GaAs.

MOS structures	Dielectric constant	Leakage current at 1 MV/cm	Interface state density	Δ𝑉FB of hysteresis loop
PMA(350°C)-TiO2/S-InP	44	2.7 × 10^−7 and 2.3 × 10^−7 A/cm^2	7.13 × 10^11 cm^−2 eV^−1	17 mV
PMA(350°C)-TiO2/S-GaAs	66	9.7 × 10^−8 and 1.4 × 10^−7	5.96 × 10^11 cm^−2 eV^−1	9 mV