Modeling of Current-Voltage Characteristics of the Photoactivated
Device Based on SOI Technology

<table>Experimental <svg height="15.4375" id="M191" style="vertical-align:-3.41931pt" version="1.1" viewbox="0 0 56.237499 15.4375" width="56.237499" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
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<g transform="matrix(.017,0,0,-.017,22.5,11.113)"><path d="M300 253l-14 -55h-229l14 55h229z" id="x2D"></path></g><g transform="matrix(.017,0,0,-.017,28.552,11.113)"><path d="M730 650l-8 -28q-52 -4 -72 -18t-64 -77q-79 -113 -321 -539h-33l-119 541q-13 59 -29.5 73t-66.5 20l7 28h245l-8 -28l-28 -5q-33 -6 -40.5 -15.5t-0.5 -38.5l102 -450h2q191 320 246 430q21 42 15.5 56t-43.5 19l-31 4l7 28h240z" id="x1D449"></path></g>
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</svg> characteristics: the measurements are taken in dark conditions (solid lines) for several values of <svg height="15.4375" id="M192" style="vertical-align:-3.41931pt" version="1.1" viewbox="0 0 27.512501 15.4375" width="27.512501" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
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</svg> between 3 V and −1 V. The dotted lines result from the calculated current according to the proposed unified model.</table>

Active and Passive Electronic Components

fig3

Figure 3

Figure 3: Modeling of Current-Voltage Characteristics of the Photoactivated
Device Based on SOI Technology 

Active and Passive Electronic Components

Modeling of Current-Voltage Characteristics of the Photoactivated Device Based on SOI Technology

Figure 3