GaN-Based High-<i  >k</i> Praseodymium Oxide Gate MISFETs with <svg     style="vertical-align:-4.47125pt;width:138.2375px;" id="M1" height="21.612499" version="1.1" viewBox="0 0 138.2375 21.612499" width="138.2375"  xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg">
	
		
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			<g transform="matrix(.022,-0,0,-.022,114.5,15.975)"><use xlink:href="#x53"/></g>

			<g transform="matrix(.016,-0,0,-.016,125.125,21.363)"><path id="x1D44B" d="M775 650l-6 -28q-60 -6 -81.5 -16t-61.5 -54l-175 -191l125 -243q30 -58 48.5 -71t82.5 -19l-5 -28h-275l7 28l35 4q31 4 37 12t-6 34l-108 216q-140 -165 -177 -219q-16 -22 -10.5 -30.5t41.5 -13.5l22 -3l-7 -28h-244l8 28q52 4 75 15.5t67 52.5q48 46 206 231
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</svg> + UV Interface Treatment Technology

<table>pH value of P<sub>2</sub>S<sub>5</sub>/(NH<sub>4</sub>)<sub>2</sub><svg height="15.5125" id="M28" style="vertical-align:-3.27605pt" version="1.1" viewbox="0 0 18.225 15.5125" width="18.225" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
<g transform="matrix(.017,-0,0,-.017,.062,11.363)"><path d="M409 504l-29 -5q-16 60 -44.5 96t-86.5 36q-54 0 -82.5 -32t-28.5 -77q0 -51 30.5 -82.5t96.5 -65.5l35.5 -18t33 -19.5t33.5 -23.5l27 -25.5t24.5 -32t13.5 -36.5t6 -45q0 -80 -62 -134.5t-160 -54.5q-47 0 -98 15q-22 7 -50 21q-8 23 -27 155l30 7q7 -27 18 -52
t30 -51.5t49 -42.5t67 -16q56 0 88 32.5t32 87.5q0 51 -31.5 82t-98.5 67q-80 44 -110 73q-55 53 -55 124q0 75 56 126.5t150 51.5q53 0 126 -23z" id="x53"></path></g>
<g transform="matrix(.012,-0,0,-.012,8.125,15.45)"><path d="M775 650l-6 -28q-60 -6 -81.5 -16t-61.5 -54l-175 -191l125 -243q30 -58 48.5 -71t82.5 -19l-5 -28h-275l7 28l35 4q31 4 37 12t-6 34l-108 216q-140 -165 -177 -219q-16 -22 -10.5 -30.5t41.5 -13.5l22 -3l-7 -28h-244l8 28q52 4 75 15.5t67 52.5q48 46 206 231
l-110 215q-26 51 -44 63t-72 17l6 28h250l-6 -28l-27 -4q-30 -5 -35 -10t3 -27q17 -43 95 -190q70 78 154 185q15 21 10 29.5t-33 12.5l-30 4l5 28h236z" id="x1D44B"></path></g>
</svg> solution versus P<sub>2</sub>S<sub>5</sub> weight.</table>

Active and Passive Electronic Components

fig2

Figure 2

Figure 2: GaN-Based High-<i  >k</i> Praseodymium Oxide Gate MISFETs with <svg     style="vertical-align:-4.47125pt;width:138.2375px;" id="M1" height="21.612499" version="1.1" viewBox="0 0 138.2375 21.612499" width="138.2375"  xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg">
	
		
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t-108.5 38.5q-44 0 -56 -12q-11 -8 -11 -47z" /></g>

			<g transform="matrix(.016,-0,0,-.016,12.687,21.363)"><path id="x32" d="M412 140l28 -9q0 -2 -35 -131h-373v23q112 112 161 170q59 70 92 127t33 115q0 63 -31 98t-86 35q-75 0 -137 -93l-22 20l57 81q55 59 135 59q69 0 118.5 -46.5t49.5 -122.5q0 -62 -29.5 -114t-102.5 -130l-141 -149h186q42 0 58.5 10.5t38.5 56.5z" /></g>

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			<g transform="matrix(.022,-0,0,-.022,114.5,15.975)"><use xlink:href="#x53"/></g>

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</svg> + UV Interface Treatment Technology 

Figure 2 | GaN-Based High-k Praseodymium Oxide Gate MISFETs with 
	
		
			

			

			

			

			

			

			

			

			

			

		
	
 + UV Interface Treatment Technology 

Active and Passive Electronic Components

GaN-Based High-k Praseodymium Oxide Gate MISFETs with + UV Interface Treatment Technology

Figure 2