GaN-Based High-<i  >k</i> Praseodymium Oxide Gate MISFETs with <svg     style="vertical-align:-4.47125pt;width:138.2375px;" id="M1" height="21.612499" version="1.1" viewBox="0 0 138.2375 21.612499" width="138.2375"  xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg">
	
		
			<g transform="matrix(.022,-0,0,-.022,.062,15.975)"><path id="x50" d="M46 650h247q112 0 169 -41q64 -49 64 -141q0 -91 -56.5 -143t-138.5 -62q-23 -3 -45 -1l-74 19v-157q0 -63 15.5 -77t83.5 -19v-28h-271v28q60 5 74 20t14 77v400q0 65 -12.5 79t-69.5 18v28zM212 559v-245q31 -12 73 -12q59 0 102 38t43 124q0 77 -42.5 115.5
t-108.5 38.5q-44 0 -56 -12q-11 -8 -11 -47z" /></g>

			<g transform="matrix(.016,-0,0,-.016,12.687,21.363)"><path id="x32" d="M412 140l28 -9q0 -2 -35 -131h-373v23q112 112 161 170q59 70 92 127t33 115q0 63 -31 98t-86 35q-75 0 -137 -93l-22 20l57 81q55 59 135 59q69 0 118.5 -46.5t49.5 -122.5q0 -62 -29.5 -114t-102.5 -130l-141 -149h186q42 0 58.5 10.5t38.5 56.5z" /></g>

			<g transform="matrix(.022,-0,0,-.022,20.838,15.975)"><path id="x53" d="M409 504l-29 -5q-16 60 -44.5 96t-86.5 36q-54 0 -82.5 -32t-28.5 -77q0 -51 30.5 -82.5t96.5 -65.5l35.5 -18t33 -19.5t33.5 -23.5l27 -25.5t24.5 -32t13.5 -36.5t6 -45q0 -80 -62 -134.5t-160 -54.5q-47 0 -98 15q-22 7 -50 21q-8 23 -27 155l30 7q7 -27 18 -52
t30 -51.5t49 -42.5t67 -16q56 0 88 32.5t32 87.5q0 51 -31.5 82t-98.5 67q-80 44 -110 73q-55 53 -55 124q0 75 56 126.5t150 51.5q53 0 126 -23z" /></g>

			<g transform="matrix(.016,-0,0,-.016,31.463,21.363)"><path id="x35" d="M153 550l-26 -186q79 31 111 31q90 0 141.5 -51t51.5 -119q0 -93 -89 -166q-85 -69 -173 -71q-32 0 -61.5 11.5t-41.5 23.5q-18 17 -17 34q2 16 22 33q14 9 26 -1q61 -50 124 -50q60 0 93 43.5t33 104.5q0 69 -41.5 110t-121.5 41q-53 0 -102 -20l38 305h286l6 -8
l-26 -65h-233z" /></g>

			<g transform="matrix(.022,-0,0,-.022,39.612,15.975)"><path id="x2F" d="M368 703l-264 -866h-60l265 866h59z" /></g><g transform="matrix(.022,-0,0,-.022,48.848,15.975)"><path id="x28" d="M300 -147l-18 -23q-106 71 -159 185.5t-53 254.5v1q0 139 53 252.5t159 186.5l18 -24q-74 -62 -115.5 -173.5t-41.5 -242.5q0 -130 41.5 -242.5t115.5 -174.5z" /></g><g transform="matrix(.022,-0,0,-.022,56.604,15.975)"><path id="x4E" d="M719 650v-28q-43 -2 -62 -15t-22 -44q-6 -47 -6 -169v-403h-31l-426 524h-2v-251q0 -111 6 -169q4 -37 24 -50.5t72 -16.5v-28h-237v28q45 2 64.5 16t23.5 49q6 62 6 171v220q0 54 -3 68.5t-17 32.5q-16 19 -34.5 26.5t-54.5 10.5v28h147l418 -502h3v246q0 117 -7 166
q-4 34 -24.5 47t-73.5 15v28h236z" /></g><g transform="matrix(.022,-0,0,-.022,73.259,15.975)"><path id="x48" d="M729 650v-28q-62 -5 -76 -19.5t-14 -75.5v-404q0 -62 13.5 -76t75.5 -19v-28h-268v28q65 5 79.5 19t14.5 76v199h-341v-199q0 -62 14 -76t76 -19v-28h-263v28q61 5 74.5 19t13.5 76v404q0 62 -14 76t-76 19v28h259v-28q-58 -5 -71 -19t-13 -76v-162h341v162
q0 61 -13.5 75.5t-72.5 19.5v28h261z" /></g>

			<g transform="matrix(.016,-0,0,-.016,90.438,21.363)"><path id="x34" d="M456 178h-96v-72q0 -51 12.5 -62.5t72.5 -16.5v-27h-256v27q65 5 78 17t13 62v72h-260v28q182 271 300 426h40v-407h96v-47zM280 225v295h-2q-107 -148 -196 -295h198z" /></g>

			<g transform="matrix(.022,-0,0,-.022,98.588,15.975)"><path id="x29" d="M275 270q0 -296 -211 -440l-19 23q75 62 116.5 174t41.5 243t-42 243t-116 173l19 24q211 -144 211 -440z" /></g>

			<g transform="matrix(.016,-0,0,-.016,106.337,21.363)"><use xlink:href="#x32"/></g>

			<g transform="matrix(.022,-0,0,-.022,114.5,15.975)"><use xlink:href="#x53"/></g>

			<g transform="matrix(.016,-0,0,-.016,125.125,21.363)"><path id="x1D44B" d="M775 650l-6 -28q-60 -6 -81.5 -16t-61.5 -54l-175 -191l125 -243q30 -58 48.5 -71t82.5 -19l-5 -28h-275l7 28l35 4q31 4 37 12t-6 34l-108 216q-140 -165 -177 -219q-16 -22 -10.5 -30.5t41.5 -13.5l22 -3l-7 -28h-244l8 28q52 4 75 15.5t67 52.5q48 46 206 231
l-110 215q-26 51 -44 63t-72 17l6 28h250l-6 -28l-27 -4q-30 -5 -35 -10t3 -27q17 -43 95 -190q70 78 154 185q15 21 10 29.5t-33 12.5l-30 4l5 28h236z" /></g>

		
	
</svg> + UV Interface Treatment Technology

<table>(a) 3<i>d</i> core-level XPS spectra of Pr<sub>2</sub>O<sub>3</sub> versus temperatures. (b) TEM cross-sectional photograph of Pr<sub>2</sub>O<sub>3</sub> MIS-HEMT.</table>

Active and Passive Electronic Components

fig4

Figure 4

Figure 4: GaN-Based High-<i  >k</i> Praseodymium Oxide Gate MISFETs with <svg     style="vertical-align:-4.47125pt;width:138.2375px;" id="M1" height="21.612499" version="1.1" viewBox="0 0 138.2375 21.612499" width="138.2375"  xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg">
	
		
			<g transform="matrix(.022,-0,0,-.022,.062,15.975)"><path id="x50" d="M46 650h247q112 0 169 -41q64 -49 64 -141q0 -91 -56.5 -143t-138.5 -62q-23 -3 -45 -1l-74 19v-157q0 -63 15.5 -77t83.5 -19v-28h-271v28q60 5 74 20t14 77v400q0 65 -12.5 79t-69.5 18v28zM212 559v-245q31 -12 73 -12q59 0 102 38t43 124q0 77 -42.5 115.5
t-108.5 38.5q-44 0 -56 -12q-11 -8 -11 -47z" /></g>

			<g transform="matrix(.016,-0,0,-.016,12.687,21.363)"><path id="x32" d="M412 140l28 -9q0 -2 -35 -131h-373v23q112 112 161 170q59 70 92 127t33 115q0 63 -31 98t-86 35q-75 0 -137 -93l-22 20l57 81q55 59 135 59q69 0 118.5 -46.5t49.5 -122.5q0 -62 -29.5 -114t-102.5 -130l-141 -149h186q42 0 58.5 10.5t38.5 56.5z" /></g>

			<g transform="matrix(.022,-0,0,-.022,20.838,15.975)"><path id="x53" d="M409 504l-29 -5q-16 60 -44.5 96t-86.5 36q-54 0 -82.5 -32t-28.5 -77q0 -51 30.5 -82.5t96.5 -65.5l35.5 -18t33 -19.5t33.5 -23.5l27 -25.5t24.5 -32t13.5 -36.5t6 -45q0 -80 -62 -134.5t-160 -54.5q-47 0 -98 15q-22 7 -50 21q-8 23 -27 155l30 7q7 -27 18 -52
t30 -51.5t49 -42.5t67 -16q56 0 88 32.5t32 87.5q0 51 -31.5 82t-98.5 67q-80 44 -110 73q-55 53 -55 124q0 75 56 126.5t150 51.5q53 0 126 -23z" /></g>

			<g transform="matrix(.016,-0,0,-.016,31.463,21.363)"><path id="x35" d="M153 550l-26 -186q79 31 111 31q90 0 141.5 -51t51.5 -119q0 -93 -89 -166q-85 -69 -173 -71q-32 0 -61.5 11.5t-41.5 23.5q-18 17 -17 34q2 16 22 33q14 9 26 -1q61 -50 124 -50q60 0 93 43.5t33 104.5q0 69 -41.5 110t-121.5 41q-53 0 -102 -20l38 305h286l6 -8
l-26 -65h-233z" /></g>

			<g transform="matrix(.022,-0,0,-.022,39.612,15.975)"><path id="x2F" d="M368 703l-264 -866h-60l265 866h59z" /></g><g transform="matrix(.022,-0,0,-.022,48.848,15.975)"><path id="x28" d="M300 -147l-18 -23q-106 71 -159 185.5t-53 254.5v1q0 139 53 252.5t159 186.5l18 -24q-74 -62 -115.5 -173.5t-41.5 -242.5q0 -130 41.5 -242.5t115.5 -174.5z" /></g><g transform="matrix(.022,-0,0,-.022,56.604,15.975)"><path id="x4E" d="M719 650v-28q-43 -2 -62 -15t-22 -44q-6 -47 -6 -169v-403h-31l-426 524h-2v-251q0 -111 6 -169q4 -37 24 -50.5t72 -16.5v-28h-237v28q45 2 64.5 16t23.5 49q6 62 6 171v220q0 54 -3 68.5t-17 32.5q-16 19 -34.5 26.5t-54.5 10.5v28h147l418 -502h3v246q0 117 -7 166
q-4 34 -24.5 47t-73.5 15v28h236z" /></g><g transform="matrix(.022,-0,0,-.022,73.259,15.975)"><path id="x48" d="M729 650v-28q-62 -5 -76 -19.5t-14 -75.5v-404q0 -62 13.5 -76t75.5 -19v-28h-268v28q65 5 79.5 19t14.5 76v199h-341v-199q0 -62 14 -76t76 -19v-28h-263v28q61 5 74.5 19t13.5 76v404q0 62 -14 76t-76 19v28h259v-28q-58 -5 -71 -19t-13 -76v-162h341v162
q0 61 -13.5 75.5t-72.5 19.5v28h261z" /></g>

			<g transform="matrix(.016,-0,0,-.016,90.438,21.363)"><path id="x34" d="M456 178h-96v-72q0 -51 12.5 -62.5t72.5 -16.5v-27h-256v27q65 5 78 17t13 62v72h-260v28q182 271 300 426h40v-407h96v-47zM280 225v295h-2q-107 -148 -196 -295h198z" /></g>

			<g transform="matrix(.022,-0,0,-.022,98.588,15.975)"><path id="x29" d="M275 270q0 -296 -211 -440l-19 23q75 62 116.5 174t41.5 243t-42 243t-116 173l19 24q211 -144 211 -440z" /></g>

			<g transform="matrix(.016,-0,0,-.016,106.337,21.363)"><use xlink:href="#x32"/></g>

			<g transform="matrix(.022,-0,0,-.022,114.5,15.975)"><use xlink:href="#x53"/></g>

			<g transform="matrix(.016,-0,0,-.016,125.125,21.363)"><path id="x1D44B" d="M775 650l-6 -28q-60 -6 -81.5 -16t-61.5 -54l-175 -191l125 -243q30 -58 48.5 -71t82.5 -19l-5 -28h-275l7 28l35 4q31 4 37 12t-6 34l-108 216q-140 -165 -177 -219q-16 -22 -10.5 -30.5t41.5 -13.5l22 -3l-7 -28h-244l8 28q52 4 75 15.5t67 52.5q48 46 206 231
l-110 215q-26 51 -44 63t-72 17l6 28h250l-6 -28l-27 -4q-30 -5 -35 -10t3 -27q17 -43 95 -190q70 78 154 185q15 21 10 29.5t-33 12.5l-30 4l5 28h236z" /></g>

		
	
</svg> + UV Interface Treatment Technology 

Figure 4 | GaN-Based High-k Praseodymium Oxide Gate MISFETs with 
	
		
			

			

			

			

			

			

			

			

			

			

		
	
 + UV Interface Treatment Technology 

Active and Passive Electronic Components

GaN-Based High-k Praseodymium Oxide Gate MISFETs with + UV Interface Treatment Technology

Figure 4