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Active and Passive Electronic Components
Volume 2012 (2012), Article ID 459043, 10 pages
GaN-Based High-k Praseodymium Oxide Gate MISFETs with + UV Interface Treatment Technology
Department of Electronics Engineering, Chang Gung University, Taoyuan, Taiwan
Received 1 July 2012; Revised 28 September 2012; Accepted 26 October 2012
Academic Editor: Pei-Wen Li
Copyright © 2012 Chao-Wei Lin and Hsien-Chin Chiu. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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