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Active and Passive Electronic Components
Volume 2012 (2012), Article ID 459043, 10 pages
http://dx.doi.org/10.1155/2012/459043
Research Article

GaN-Based High-k Praseodymium Oxide Gate MISFETs with + UV Interface Treatment Technology

Department of Electronics Engineering, Chang Gung University, Taoyuan, Taiwan

Received 1 July 2012; Revised 28 September 2012; Accepted 26 October 2012

Academic Editor: Pei-Wen Li

Copyright © 2012 Chao-Wei Lin and Hsien-Chin Chiu. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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