GaN-Based High-k Praseodymium Oxide Gate MISFETs with P₂S₅/(NH₄)₂S_𝑋 + UV Interface Treatment Technology

Table 1

The Hall measurement and surface roughness results for various treatment devices.

Pretreatment	Mobility; (cm^2/V-sec)	Sheet charge density (cm^−2)	Surface roughness (nm)
Standard	1060	1.648 × 10^13	0.238
(NH4)2S𝑋	985	1.784 × 10^13	0.514
(NH4)2S𝑋 + UV	1087	1.512 × 10^13	0.471
P2S5/(NH4)2S𝑋	1100	1.485 × 10^13	0.443
P2S5/(NH4)2S𝑋 + UV	1150	1.403 × 10^13	0.382