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Active and Passive Electronic Components
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Active and Passive Electronic Components
/
2012
/
Article
/
Tab 2
/
Research Article
GaN-Based High-
k
Praseodymium Oxide Gate MISFETs with
+ UV Interface Treatment Technology
Table 2
The dc and RF characteristics comparisons of a standard HEMT, a Pr
2
O
3
MISFET, and a P
2
S
5
/(NH
4
)
2
+ UV-treated Pr
2
O
3
MISFET.
Measurement results
Standard
Pr
2
O
3
P
2
S
5
/(NH
4
)
2
+ UV Pr
2
O
3
Schottky turn-on voltage (
)
1.08 V
1.69 V
1.71 V
Breakdown voltage (
)
−107.5 V
−128.2 V
−131.3 V
Pinch-off voltage (
)
−5.8 V
−6.4 V
−6.8 V
Maximum drain current (
)
923.4 mA/mm
864.4 mA/mm
920.04 mA/mm
Peak transconductance (
)
143.58 mS/mm
121 mS/mm
132.36 mS/mm
Current gain cut-off frequency (
)
9.2 GHz
7.9 GHz
8.5 GHz
Maximum oscillation frequency (
)
16.8 GHz
19.2 GHz
16.2 GHz
