Table 2: The dc and RF characteristics comparisons of a standard HEMT, a Pr2O3 MISFET, and a P2S5/(NH4)2 + UV-treated Pr2O3 MISFET.
Measurement results Standard Pr2O3P2S5/(NH4)2 + UV Pr2O3
Schottky turn-on voltage ( ) 1.08 V 1.69 V 1.71 V
Breakdown voltage ( ) −107.5 V −128.2 V −131.3 V
Pinch-off voltage ( ) −5.8 V −6.4 V −6.8 V
Maximum drain current ( )923.4 mA/mm 864.4 mA/mm 920.04 mA/mm
Peak transconductance ( ) 143.58 mS/mm 121 mS/mm 132.36 mS/mm
Current gain cut-off frequency ( ) 9.2 GHz 7.9 GHz 8.5 GHz
Maximum oscillation frequency ( ) 16.8 GHz 19.2 GHz 16.2 GHz