A Very Robust AlGaN/GaN HEMT Technology to High Forward Gate Bias and Current

Figure 1

Transfer and transconductance curves (a) and associated gate current in absolute value (b) of the device as measured during characterizations between gate stressing events. Insets show detail at regions of interest in the same data sets. Extra gate current is seen in (b) above 𝑉_𝐺≈−3.5 V after 210-minute stress (top curve) that is not seen after longer stress time (second-to-top curve). It is not known if there was a temporary test issue or if that is indeed real.

(a)

(b)