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Active and Passive Electronic Components
Volume 2012 (2012), Article ID 565827, 9 pages
http://dx.doi.org/10.1155/2012/565827
Research Article

Analysis of Kink Reduction in SOI MOSFET Using Selective Back Oxide Structure

1Department of Electrical Engineering, American University of Sharjah, P.O. Box 26666, Sharjah, UAE
2Department of Electrical Engineering, Indian Institute of Technology, Kanpur 208016, India
3NERIST, Nirjuli, 791109, Itanagar, India
4Birla Institute of Technology, Mesra, 835 215 Ranchi, India

Received 1 March 2012; Accepted 9 May 2012

Academic Editor: Daisaburo Takashima

Copyright © 2012 M. Narayanan et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

M. Narayanan, H. Al-Nashash, Baquer Mazhari, Dipankar Pal, and Mahesh Chandra, “Analysis of Kink Reduction in SOI MOSFET Using Selective Back Oxide Structure,” Active and Passive Electronic Components, vol. 2012, Article ID 565827, 9 pages, 2012. doi:10.1155/2012/565827