Analysis of Kink Reduction in SOI MOSFET Using Selective Back Oxide Structure

<table>Dependence of kink voltage on gap between the oxide regions. (SELBOX thickness is 0.4 <i><i>μ</i></i>m).</table>

Active and Passive Electronic Components

Figure 9: Analysis of Kink Reduction in SOI MOSFET Using Selective Back Oxide Structure 