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Active and Passive Electronic Components
Volume 2012 (2012), Article ID 652478, 12 pages
http://dx.doi.org/10.1155/2012/652478
Research Article

A Unified Channel Charges Expression for Analytic MOSFET Modeling

Normandie Université, Ensicaen, UMR 6508, LaMIPS, Laboratoire Commun CNRS-NXP-PRESTO-ENSICAEN UCBN, 6 boulevard Maréchal Juin, 14050 CAEN Cedex 4, France

Received 22 June 2012; Accepted 9 November 2012

Academic Editor: Gerard Ghibaudo

Copyright © 2012 Hugues Murray and Patrick Martin. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

Based on a 1D Poissons equation resolution, we present an analytic model of inversion charges allowing calculation of the drain current and transconductance in the Metal Oxide Semiconductor Field Effect Transistor. The drain current and transconductance are described by analytical functions including mobility corrections and short channel effects (CLM, DIBL). The comparison with the Pao-Sah integral shows excellent accuracy of the model in all inversion modes from strong to weak inversion in submicronics MOSFET. All calculations are encoded with a simple C program and give instantaneous results that provide an efficient tool for microelectronics users.