Research Article
A Unified Channel Charges Expression for Analytic MOSFET Modeling
Table 2
The simplified analytic drain current models.
| Physical constants | , | Process parameters | | Device voltages | | Surface potential in , | | Surface potential | | Mobility | | Drain current from Pao-sah | | Gate voltage factors | , | Analytic expression of drain current | | Saturation voltage | | Drain current with saturation | | Channel length modulation | | Drain-induced barrier lowering | |
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