Gate Stack Engineering and Thermal Treatment on Electrical and Interfacial Properties of Ti/Pt/HfO₂/InAs pMOS Capacitors

Figure 1

CTEM images of HfO₂  in situ deposited on InP/InAs channel at (a) 200°C and (b) 300°C. Abrupt and native oxide free interface provides a promising interface for MOS applications.

(a)

(b)