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Active and Passive Electronic Components
Volume 2012 (2012), Article ID 796973, 15 pages
http://dx.doi.org/10.1155/2012/796973
Research Article

Characterization and Modeling of DHBT in InP/GaAsSb Technology for the Design and Fabrication of a Ka Band MMIC Oscillator

1XLIM-High Frequency Components, Circuits, Signals and System Department (C2S2), Université de Limoges, 7 rue Jules Vallés, 19100 Brive, France
2III–V Lab, Joint Lab between Bell Labs, TRT and CEA/Leti, Route de Nozay, 91460 Marcoussis, France

Received 13 September 2011; Accepted 18 November 2011

Academic Editor: Christoph Sandner

Copyright © 2012 S. Laurent et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

S. Laurent, J. C. Nallatamby, M. Prigent, M. Riet, and V. Nodjiadjim, “Characterization and Modeling of DHBT in InP/GaAsSb Technology for the Design and Fabrication of a Ka Band MMIC Oscillator,” Active and Passive Electronic Components, vol. 2012, Article ID 796973, 15 pages, 2012. doi:10.1155/2012/796973