Characterization and Modeling of DHBT in InP/GaAsSb Technology for the Design and Fabrication of a Ka Band MMIC Oscillator

<table>Comparison between model (red) and I(V) measurement (blue cross) with <svg height="15.4" id="M57" style="vertical-align:-3.39066pt" version="1.1" viewbox="0 0 13.7625 15.4" width="13.7625" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
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<g transform="matrix(.012,0,0,-.012,7.487,15.188)"><path d="M452 333q0 -82 -46 -164t-116 -128q-81 -53 -158 -53q-26 0 -51 13t-37 32q-26 41 -6 134l91 431q7 40 2.5 47t-34.5 7h-33l2 25q36 4 72.5 13t58.5 15.5t28 6.5q10 0 4 -29l-91 -391h2q65 77 130 116.5t105 39.5q36 0 56.5 -32t20.5 -83zM365 316q0 76 -35 76
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</svg> current ranging 0.5 to 3.5 mA and a <svg height="15.4" id="M58" style="vertical-align:-3.39064pt" version="1.1" viewbox="0 0 23.450001 15.4" width="23.450001" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
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<g transform="matrix(.012,0,0,-.012,12.675,15.188)"><path d="M390 111l17 -21q-34 -45 -80 -73.5t-89 -28.5q-91 0 -146 62t-55 147q0 118 101 195q74 57 149 57h1q59 0 90 -27q16 -14 16 -30q0 -15 -12 -29t-21 -14q-8 0 -19 11q-44 41 -101 41q-52 0 -87.5 -42.5t-35.5 -117.5q0 -49 15 -87t39 -58t49 -30t48 -10q33 0 60.5 12
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</svg> voltage ranging 0 to 3.5 V for a temperature equal to <svg height="13.1375" id="M59" style="vertical-align:-0.1638pt" version="1.1" viewbox="0 0 21.475 13.1375" width="21.475" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
<g transform="matrix(.017,0,0,-.017,.062,12.875)"><path d="M412 140l28 -9q0 -2 -35 -131h-373v23q112 112 161 170q59 70 92 127t33 115q0 63 -31 98t-86 35q-75 0 -137 -93l-22 20l57 81q55 59 135 59q69 0 118.5 -46.5t49.5 -122.5q0 -62 -29.5 -114t-102.5 -130l-141 -149h186q42 0 58.5 10.5t38.5 56.5z" id="x32"></path></g><g transform="matrix(.017,0,0,-.017,8.222,12.875)"><path d="M153 550l-26 -186q79 31 111 31q90 0 141.5 -51t51.5 -119q0 -93 -89 -166q-85 -69 -173 -71q-32 0 -61.5 11.5t-41.5 23.5q-18 17 -17 34q2 16 22 33q14 9 26 -1q61 -50 124 -50q60 0 93 43.5t33 104.5q0 69 -41.5 110t-121.5 41q-53 0 -102 -20l38 305h286l6 -8
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<g transform="matrix(.012,0,0,-.012,16.375,4.713)"><path d="M326 255q0 -56 -41 -96t-99 -40t-99 40t-41 96t41 96t99 40t99 -40t41 -96zM274 255q0 38 -25.5 65t-62.5 27t-62.5 -27t-25.5 -65t25.5 -65t62.5 -27t62.5 27t25.5 65z" id="x2218"></path></g>
</svg>C.</table>

Active and Passive Electronic Components

fig4

Figure 4

Figure 4: Characterization and Modeling of DHBT in InP/GaAsSb Technology for the Design and Fabrication of a Ka Band MMIC Oscillator 