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Active and Passive Electronic Components
Volume 2012 (2012), Article ID 796973, 15 pages
Characterization and Modeling of DHBT in InP/GaAsSb Technology for the Design and Fabrication of a Ka Band MMIC Oscillator
1XLIM-High Frequency Components, Circuits, Signals and System Department (C2S2), Université de Limoges, 7 rue Jules Vallés, 19100 Brive, France
2III–V Lab, Joint Lab between Bell Labs, TRT and CEA/Leti, Route de Nozay, 91460 Marcoussis, France
Received 13 September 2011; Accepted 18 November 2011
Academic Editor: Christoph Sandner
Copyright © 2012 S. Laurent et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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