Research Article
Characterization and Modeling of DHBT in InP/GaAsSb Technology for the Design and Fabrication of a Ka Band MMIC Oscillator
Table 5
Comparison of oscillator performances.
(a) |
| Technology | (GHz) | TB (%) | (dBc/Hz) |
| Si/SiGe [16] | 38 | not | −55 | InGaP/GaAs [17] | 40.8 | <1% | −95 | GaAs [18] | 38 | not | −104 | AlInAs/InGaAs [19] | 39 | 9 | −75 | AlInAs/InGaAs [20] | 38.1 | <1% | −85 | InP [21] | 39.9 | <1% | −84 |
| InP (this work) | 37.1 | not | −80 |
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(b) |
| (KHz) | (dBm) | FOM (dBc/Hz) |
| 100 | 2 | −53.2 | 100 | 5.3 | −90.5 | 1000 | 11.9 | −67.3 | 100 | 5 | −89.5 | 100 | 8.4 | −76.8 | 100 | 5 | −79.6 |
| 100 | 5.18 | −74.8 |
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