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Active and Passive Electronic Components
Volume 2012 (2012), Article ID 806253, 11 pages
http://dx.doi.org/10.1155/2012/806253
Research Article

Analytic Model for Conduction Current in AlGaN/GaN HFETs/HEMTs

Department of ECE, North Carolina State University, Raleigh, NC 27695-7911, USA

Received 10 August 2011; Accepted 28 October 2011

Academic Editor: Narayanan Balasubramanian

Copyright © 2012 Danqiong Hou et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Linked References

  1. J. C. Zolper, “Wide bandgap semiconductor microwave technologies: from promise to practice,” in Proceedings of the IEEE International Devices Meeting (IEDM '99), pp. 389–392, December 1999. View at Scopus
  2. R. J. Trew, “SiC and GaN transistors-Is there one winner for microwave power applications?” Proceedings of the IEEE, vol. 90, no. 6, pp. 1032–1047, 2002. View at Publisher · View at Google Scholar · View at Scopus
  3. M. A. Khan, A. Bhattarai, J. N. Kuznia, and D. T. Olson, “High electron mobility transistor based on a GaN—AlxGa (1-x)N heterojunction,” Applied Physics Letters, vol. 63, no. 9, pp. 1214–1215, 1993. View at Publisher · View at Google Scholar · View at Scopus
  4. Y. F. Wu, B. P. Keller, P. Fini et al., “High Al-content AlGaN/GaN MODFET's for ultrahigh performance,” IEEE Electron Device Letters, vol. 19, no. 2, pp. 50–53, 1998. View at Scopus
  5. W. Lu, J. Yang, M. A. Khan, and I. Adesida, “AlGaN/GaN HEMTs on SiC with over 100 GHz fT and low microwave noise,” IEEE Transactions on Electron Devices, vol. 48, no. 3, pp. 581–585, 2001. View at Publisher · View at Google Scholar · View at Scopus
  6. Y. Cordier, J. C. Moreno, N. Baron et al., “Demonstration of AlGaN/GaN high-electron-mobility transistors grown by molecular beam epitaxy on Si(110),” IEEE Electron Device Letters, vol. 29, no. 11, pp. 1187–1189, 2008. View at Publisher · View at Google Scholar · View at Scopus
  7. I. Angelov, H. Zirath, and N. Rorsman, “A new empirical nonlinear model for HEMT-devices,” in Proceedings of the IEEE MTT-S International Microwave Symposium Digest Part 3, pp. 1583–1586, 1992. View at Scopus
  8. I. Angelov, L. Bengtsson, and M. Garcia, “Extensions of the chalmers nonlinear HEMT and MESFET model,” IEEE Transactions on Microwave Theory and Techniques, vol. 44, no. 10, pp. 1664–1674, 1996. View at Scopus
  9. Silvaco Manual, Silvaco Data Systems Inc., Santa Clara, Calif, USA.
  10. A. Asgari, M. Kalafi, and L. Faraone, “A quasi-two-dimensional charge transport model of AlGaN/GaN high electron mobility transistors (HEMTs),” Physica E, vol. 28, no. 4, pp. 491–499, 2005. View at Publisher · View at Google Scholar · View at Scopus
  11. H. Ahn and M. El Nokali, “Analytical model for high electron mobility transistors,” IEEE Transactions on Electron Devices, vol. 41, no. 6, pp. 874–878, 1994. View at Publisher · View at Google Scholar · View at Scopus
  12. R. Singh and C. M. Snowden, “A quasi-two-dimensional HEMT model for DC and microwave simulation,” IEEE Transactions on Electron Devices, vol. 45, no. 6, pp. 1165–1169, 1998. View at Scopus
  13. J. D. Albrecht, P. P. Ruden, S. C. Binari, and M. G. Ancona, “AlGaN/GaN heterostructure field-effect transistor model including thermal effects,” IEEE Transactions on Electron Devices, vol. 47, no. 11, pp. 2031–2036, 2000. View at Publisher · View at Google Scholar
  14. T. H. Yu and K. F. Brennan, “Theoretical study of a GaN-AlGaN high electron mobility transistor including a nonlinear polarization model,” IEEE Transactions on Electron Devices, vol. 50, no. 2, pp. 315–323, 2003. View at Publisher · View at Google Scholar · View at Scopus
  15. A. Koudymov, M. S. Shur, G. Simin et al., “Analytical HFET I-V model in presence of current collapse,” IEEE Transactions on Electron Devices, vol. 55, no. 3, pp. 712–720, 2008. View at Publisher · View at Google Scholar · View at Scopus
  16. X. Cheng, M. Li, and Y. Wang, “Physics-Based Compact Model for AlGaN/GaN MODFETs With Close-Formed I- V and C- V Characteristics,” IEEE Transactions on Electron Devices, vol. 36, no. 2, pp. 231–239, 1988. View at Publisher · View at Google Scholar · View at Scopus
  17. M. W. Shin, R. J. Trew, and G. L. Bilbro, “High temperature dc and RF performance of p-type diamond MESFET: comparison with N-type GaAs MESFET,” IEEE Electron Device Letters, vol. 15, no. 8, pp. 292–294, 1994. View at Publisher · View at Google Scholar · View at Scopus
  18. C. W. Hatfield, G. L. Bilbro, S. T. Allen, and J. W. Palmour, “DC I-V characteristics and RF performance of a 4H-SiC JFET at 773 K,” IEEE Transactions on Electron Devices, vol. 45, no. 9, pp. 2072–2074, 1998. View at Scopus
  19. M. A. Khatibzadeh and R. J. Trew, “LARGE-SIGNAL, ANALYTIC MODEL FOR THE GAAS MESFET,” IEEE Transactions on Microwave Theory and Techniques, vol. 36, no. 2, pp. 231–238, 1988. View at Publisher · View at Google Scholar · View at Scopus
  20. R. J. Trew, Y. Liu, G. L. Bilbro, W. Kuang, R. Vetury, and J. B. Shealy, “Nonlinear source resistance in high-voltage microwave alGaN/gaN HFETs,” IEEE Transactions on Microwave Theory and Techniques, vol. 54, no. 5, pp. 2061–2067, 2006. View at Publisher · View at Google Scholar · View at Scopus
  21. H. Yin, D. Hou, G. L. Bilbro, and R. J. Trew, “Harmonie balance simulation of a new physics based model of the AlGaN/GaN HFET,” in Proceedings of the IEEE International Microwave Symposium Digest, (MTT-S '08), pp. 1425–1428, 2008. View at Publisher · View at Google Scholar
  22. C. Canali, G. Majni, R. Minder, and G. Ottaviani, “Electron and hole drift velocity measurements in silicon and their empirical relation to electric field and temperature,” IEEE Transactions on Electron Devices, vol. 22, no. 11, pp. 1045–1047, 1975. View at Scopus
  23. M. Farahmand, C. Garetto, E. Bellotti et al., “Monte Carlo simulation of electron transport in the III-nitride Wurtzite phase materials system: binaries and ternaries,” IEEE Transactions on Electron Devices, vol. 48, no. 3, pp. 535–542, 2001. View at Publisher · View at Google Scholar · View at Scopus
  24. V. M. Polyakov and F. Schwierz, “Influence of electron mobility modeling on dc I-V characteristics of WZ-GaN MESFET,” IEEE Transactions on Electron Devices, vol. 48, no. 3, pp. 512–516, 2001. View at Publisher · View at Google Scholar · View at Scopus
  25. B. K. Ridley, “Coupled surface and channel transport in semiconductor heterostructures,” Journal of Applied Physics, vol. 90, no. 12, pp. 6135–6139, 2001. View at Publisher · View at Google Scholar · View at Scopus
  26. O. Ambacher, J. Smart, J. R. Shealy et al., “Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- And Ga-face AIGaN/GaN heterostructures,” Journal of Applied Physics, vol. 85, no. 6, pp. 3222–3233, 1999. View at Scopus
  27. T. A. Winslow and R. J. Trew, “Principles of large-signal MESFET operation,” IEEE Transactions on Microwave Theory and Techniques, vol. 42, no. 6, pp. 935–942, 1994. View at Publisher · View at Google Scholar · View at Scopus
  28. R. J. Trew, Y. Liu, W. Kuang et al., “RF breakdown and large-signal modeling of AlGaN/GaN HFET's,” in Proceedings of the IEEE International Microwave Symposium Digest (MTT-S '06), pp. 643–646, San Francisco, Calif, USA, 2006. View at Publisher · View at Google Scholar · View at Scopus
  29. R. J. Trew, D. S. Green, and J. B. Shealy, “AlGaN/GaN HFET reliability,” IEEE Microwave Magazine, vol. 10, pp. 116–127, 2009.