Research Article
Analytic Model for Conduction Current in AlGaN/GaN HFETs/HEMTs
Table 1
Input parameters for the AlGaN/GaN HFET model.
| Parameter | Description | Value |
| | Electron mobility | 1120 cm2/V-s | v
sat | Saturation velocity | cm/s | | Curvature parameter in v-E relation | 1.45 | ε(GaN) | GaN permittivity | 10.1 | (GaN) | Energy gap of GaN | 3.52 eV | | Affinity of AlGaN | 3.8 eV | | Affinity of metal | 4.3 eV | | Al mole fraction in AlGaN | 0.3 | | Gate length | 0.8 μm | | Length of the source access | 1.2 μm | | Length of the drain access | 2.0 μm | W | Gate width | 400 μm | | Thickness of the AlGaN barrier layer | 30 nm | | Thickness of the GaN buffer layer | 0.3 μm | | Unintentional doping in AlGaN layer | 1016 cm−3 | | Polarization sheet charge density | cm−2 | Piezo | Piezo charge density | cm−2 | | Channel breakdown voltage | 39 | | Drain-to-source breakdown resistance | 13 | Bkdslp | Slope of | 0 |
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