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Active and Passive Electronic Components
Volume 2012 (2012), Article ID 901076, 5 pages
http://dx.doi.org/10.1155/2012/901076
Research Article

Effects of Annealing Time on the Performance of OTFT on Glass with ZrO2 as Gate Dielectric

1Department of Materials Science and Engineering, University of Toronto, 184 College Street, Toronto, ON, Canada M5S 3E4
2Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, ON, Canada M5S 3G4
3Department of Physics, Yunnan University, 2 Cuihu Beilu, Yunnan, Kumming 650091, China

Received 15 July 2011; Accepted 6 October 2011

Academic Editor: Hsiao W. Zan

Copyright © 2012 W. M. Tang et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

W. M. Tang, M. G. Helander, M. T. Greiner, Z. H. Lu, and W. T. Ng, “Effects of Annealing Time on the Performance of OTFT on Glass with ZrO2 as Gate Dielectric,” Active and Passive Electronic Components, vol. 2012, Article ID 901076, 5 pages, 2012. doi:10.1155/2012/901076