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Active and Passive Electronic Components
Volume 2012 (2012), Article ID 901076, 5 pages
doi:10.1155/2012/901076
Effects of Annealing Time on the Performance of OTFT on Glass with ZrO2 as Gate Dielectric
1Department of Materials Science and Engineering, University of Toronto, 184 College Street, Toronto, ON, M5S 3E4, Canada
2Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, ON, M5S 3G4, Canada
3Department of Physics, Yunnan University, 2 Cuihu Beilu, Yunnan, Kumming 650091, China
Received 15 July 2011; Accepted 6 October 2011
Academic Editor: Hsiao W. Zan
Copyright © 2012 W. M. Tang et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
How to Cite this Article
W. M. Tang, M. G. Helander, M. T. Greiner, Z. H. Lu, and W. T. Ng, “Effects of Annealing Time on the Performance of OTFT on Glass with ZrO2 as Gate Dielectric,” Active and Passive Electronic Components, vol. 2012, Article ID 901076, 5 pages, 2012. doi:10.1155/2012/901076