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Linked References

1. P. Mach, S. J. Rodriguez, R. Nortrup, P. Wiltzius, and J. A. Rogers, “Monolithically integrated, flexible display of polymer-dispersed liquid crystal driven by rubber-stamped organic thin-film transistors,” Applied Physics Letters, vol. 78, no. 23, pp. 3592–3594, 2001. View at Publisher · View at Google Scholar · View at Scopus
2. M. Halik, H. Klauk, U. Zschieschang et al., “Low-voltage organic transistors with an amorphous molecular gate dielectric,” Nature, vol. 431, no. 7011, pp. 963–966, 2004. View at Publisher · View at Google Scholar · View at PubMed · View at Scopus
3. T. Someya and T. Sakurai, “Integration of organic field-effect transistors and rubbery pressure sensors for artificial skin applications,” in Proceedings of the IEEE International Electron Devices Meeting, pp. 203–206, December 2003.
4. A. Tsumura, H. Koezuka, and T. Ando, “Macromolecular electronic device: field-effect transistor with a polythiophene thin film,” Applied Physics Letters, vol. 49, no. 18, pp. 1210–1212, 1986. View at Publisher · View at Google Scholar · View at Scopus
5. J. Tardy, M. Erouel, A. L. Deman et al., “Organic thin film transistors with HfO₂ high-k gate dielectric grown by anodic oxidation or deposited by sol-gel,” Microelectronics Reliability, vol. 47, no. 2-3, pp. 372–377, 2007. View at Publisher · View at Google Scholar · View at Scopus
6. J. B. Koo, J. W. Lim, S. H. Kim et al., “Pentacene thin-film transistors and inverters with plasma-enhanced atomic-layer-deposited Al₂O₃ gate dielectric,” Thin Solid Films, vol. 515, no. 5, pp. 3132–3137, 2007. View at Publisher · View at Google Scholar · View at Scopus
7. G. Wang, D. Moses, A. J. Heeger, H. M. Zhang, M. Narasimhan, and R. E. Demaray, “Poly(3-hexylthiophene) field-effect transistors with high dielectric constant gate insulator,” Journal of Applied Physics, vol. 95, no. 1, pp. 316–322, 2004. View at Publisher · View at Google Scholar · View at Scopus
8. C. Bartic, H. Jansen, A. Campitelli, and S. Borghs, “Ta₂O₅ as gate dielectric material for low-voltage organic thin-film transistors,” Organic Electronics, vol. 3, no. 2, pp. 65–72, 2002. View at Publisher · View at Google Scholar · View at Scopus
9. N. Hiroshiba, R. Kumashiro, K. Tanigaki et al., “Rubrene single crystal field-effect transistor with epitaxial BaTiO₃ high- k gate insulator,” Applied Physics Letters, vol. 89, no. 15, Article ID 152110, 2006. View at Publisher · View at Google Scholar
10. R. K. Nahar, V. Singh, and A. Sharma, “Study of electrical and microstructure properties of high dielectric hafnium oxide thin film for MOS devices,” Journal of Materials Science, vol. 18, no. 6, pp. 615–619, 2007. View at Publisher · View at Google Scholar · View at Scopus
11. B. H. Lee, S. C. Song, R. Choi, and P. Kirsch, “Metal electrode/high-κ dielectric gate-stack technology for power management,” IEEE Transactions on Electron Devices, vol. 55, no. 1, pp. 8–20, 2008. View at Publisher · View at Google Scholar · View at Scopus
12. C. C. Fulton, T. E. Cook, G. Lucovsky, and R. J. Nemanich, “Interface instabilities and electronic properties of ZrO₂ on silicon (100),” Journal of Applied Physics, vol. 96, no. 5, pp. 2665–2673, 2004. View at Publisher · View at Google Scholar · View at Scopus
13. W. J. Qi, R. Nieh, B. H. Lee et al., “MOSCAP and MOSFET characteristics using ZrO₂ gate dielectric deposited directly on Si,” in Proceedings of the 1999 IEEE International Devices Meeting (IEDM), pp. 145–148, December 1999.
14. W. J. Qi, R. Nieh, B. H. Lee et al., “Performance of MOSFETs with ultra thin ZrO₂ and Zr silicate gate dielectrics,” in Proceedings of the 2000 Symposium on VLSI Technology, pp. 40–41, June 2000.
15. H. E. Katz, L. Torsi, and A. Dodabalapur, “Synthesis, material properties, and transistor performance of highly pure thiophene oligomers,” Chemistry of Materials, vol. 7, no. 12, pp. 2235–2237, 1995. View at Scopus
16. H. E. Katz, A. Dodabalapur, L. Torsi, and D. Elder, “Precursor synthesis, coupling, and TFT evaluation of end-substituted thiophene hexamers,” Chemistry of Materials, vol. 7, no. 12, pp. 2238–2240, 1995. View at Scopus
17. R. Jiang, E. Q. Xie, and Z. F. Wang, “Effect of inner oxygen on the interfacial layer formation for HfO₂ gate dielectric,” Journal of Materials Science, vol. 42, no. 17, pp. 7343–7347, 2007. View at Publisher · View at Google Scholar · View at Scopus
18. L. Pereira, P. Barquinha, E. Fortunato, and R. Martins, “Low temperature processed hafnium oxide: structural and electrical properties,” Materials Science in Semiconductor Processing, vol. 9, no. 6, pp. 1125–1132, 2006. View at Publisher · View at Google Scholar · View at Scopus
19. D. Knipp, R. A. Street, A. Völkel, and J. Ho, “Pentacene thin film transistors on inorganic dielectrics: morphology, structural properties, and electronic transport,” Journal of Applied Physics, vol. 93, no. 1, pp. 347–355, 2003. View at Publisher · View at Google Scholar · View at Scopus
20. S. Steudel, S. De Vusser, S. De Jonge et al., “Influence of the dielectric roughness on the performance of pentacene transistors,” Applied Physics Letters, vol. 85, no. 19, pp. 4400–4402, 2004. View at Publisher · View at Google Scholar · View at Scopus
21. M. C. Kwan, K. H. Cheng, P. T. Lai, and C. M. Che, “Improved carrier mobility for pentacene TFT by NH₃ annealing of gate dielectric,” Solid-State Electronics, vol. 51, no. 1, pp. 77–80, 2007. View at Publisher · View at Google Scholar · View at Scopus
22. K. H. Cheng, W. M. Tang, L. F. Deng, C. H. Leung, P. T. Lai, and C. M. Che, “Correlation between carrier mobility of pentacene thin-film transistor and surface passivation of its gate dielectric,” Journal of Applied Physics, vol. 104, no. 11, Article ID 116107, 2008. View at Publisher · View at Google Scholar