921738.fig.005
Figure 5: Characteristics of - for pentacene-based TFTs deposited on the PVP-TiO2 nanocomposite gate dielectric insulator with TiO2 contents: 3 wt% (color line). For the device, the drain voltage ( ) was swept from 0 to −50 V, and the gate voltage ( ) was fixed at 0, −10, −20, −30, −40, and −50 V for each sweep.