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Active and Passive Electronic Components
Volume 2013 (2013), Article ID 153157, 9 pages
http://dx.doi.org/10.1155/2013/153157
Research Article

Potential and Quantum Threshold Voltage Modeling of Gate-All-Around Nanowire MOSFETs

1Pandian Saraswathi Yadav Engineering College, Sivagangai, India
2Thiagarajar Engineering College, Madurai, India
3St. Michael’s College of Engineering and Technology, Sivagangai, India

Received 21 March 2013; Revised 15 August 2013; Accepted 15 August 2013

Academic Editor: Gerard Ghibaudo

Copyright © 2013 M. Karthigai Pandian et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

M. Karthigai Pandian, N. B. Balamurugan, and A. Pricilla, “Potential and Quantum Threshold Voltage Modeling of Gate-All-Around Nanowire MOSFETs,” Active and Passive Electronic Components, vol. 2013, Article ID 153157, 9 pages, 2013. doi:10.1155/2013/153157