Logic Gates and Ring Oscillators Based on Ambipolar Nanocrystalline-Silicon TFTs
Figure 2
Current-voltage (I-V) characteristics of a 20 µm × 10 µm ambipolar nc-Si TFT with 20 nm HfO2 gate dielectric. (a) Transfer characteristics () in both forward (symbols) and reverse (lines) directions illustrating the low hysteresis in the device and (b) output characteristics ().
