525017.fig.002a
(a)
525017.fig.002b
(b)
Figure 2: Current-voltage (I-V) characteristics of a 20 µm × 10 µm ambipolar nc-Si TFT with 20 nm HfO2 gate dielectric. (a) Transfer characteristics ( ) in both forward (symbols) and reverse (lines) directions illustrating the low hysteresis in the device and (b) output characteristics ( ).