Logic Gates and Ring Oscillators Based on Ambipolar Nanocrystalline-Silicon TFTs

<table> (a) Voltage transfer characteristics of an inverter formed using two ambipolar nc-Si TFTs with 20 nm HfO<sub>2</sub> gate dielectric measured at different operating voltages. (b) Operation of the inverter at 2 MHz input frequency and <svg height="15.25" id="M6" style="vertical-align:-3.27605pt" version="1.1" viewbox="0 0 73.112503 15.25" width="73.112503" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
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Active and Passive Electronic Components

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Figure 3

Figure 3: Logic Gates and Ring Oscillators Based on Ambipolar Nanocrystalline-Silicon TFTs 