A Novel Nanoscale FDSOI MOSFET with Block-Oxide

<table>Simulated electrostatic potential (V) as a function of lateral distance along the FETs interface with gate length <svg height="15.45" id="M57" style="vertical-align:-3.43848pt" version="1.1" viewbox="0 0 19.0625 15.45" width="19.0625" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
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</svg> = 30 nm.</table>

Active and Passive Electronic Components

A Novel Nanoscale FDSOI MOSFET with Block-Oxide

Figure 2