A Novel Nanoscale FDSOI MOSFET with Block-Oxide

<table>Simulated DIBL as a function of the gate length <svg height="15.45" id="M62" style="vertical-align:-3.43848pt" version="1.1" viewbox="0 0 19.0625 15.45" width="19.0625" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
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</svg> V) and high drain bias (<svg height="15.4375" id="M64" style="vertical-align:-3.41936pt" version="1.1" viewbox="0 0 67.362503 15.4375" width="67.362503" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
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</svg> V). It is shown that the DIBL characteristics of the bFDSOI-FETs are better than those of the FDSOI-FET and similar to those of the UTBSOI-FET.</table>

Active and Passive Electronic Components

A Novel Nanoscale FDSOI MOSFET with Block-Oxide

Figure 5