Noise Performance of Heterojunction DDR MITATT Devices Based on Si∼Si_1−𝑥Ge_𝑥 at W-Band

Table 1

Design parameters.

Structures*	𝑊𝑛  (μm)	𝑊𝑝 (μm)	𝑁𝐷  (×10^23 m^−3)	𝑁𝐴  (×10^23 m^−3)	𝑁𝑛+ (×10^25 m^−3)	𝑁𝑝+ (×10^25 m^−3)	𝐷𝑗  (μm)^†
NSPS	0.40	0.38	1.20	1.25	5.0	2.7	35.0
NSpSG1	0.34	0.32	0.85	0.85	5.0	2.7	35.0
NSpSG2	0.34	0.30	0.85	1.00	5.0	2.7	35.0
nSGPS1	0.32	0.32	0.78	0.90	5.0	2.7	35.0
nSGPS2	0.34	0.32	0.85	0.90	5.0	2.7	35.0

∗NSPS: 𝑁-Si∼𝑃-Si homojunction DDR MITATT.
*NSpSG1: 𝑁-Si∼𝑝-Si_0.9Ge_0.1 anisotype heterojunction DDR MITATT.
*NSpSG2: 𝑁-Si∼𝑝-Si_0.7Ge_0.3 anisotype heterojunction DDR MITATT.
*nSGPS1: 𝑛-Si_0.9Ge_0.1∼𝑃-Si anisotype heterojunction DDR MITATT.
*nSGPS2: 𝑛-Si_0.7Ge_0.3∼𝑃-Si anisotype heterojunction DDR MITATT.
^†𝐷_𝑗: is the diameter of the p-n junction.