Noise Performance of Heterojunction DDR MITATT Devices Based on Si∼Si_1−𝑥Ge_𝑥 at W-Band

Table 3

Millimeter-wave and noise properties.

Parameters	NSPS	NSpSG1	NSpSG2	nSGPS1	nSGPS2
𝐽0 (×10^8 A m^−2)	2.8	3.0	3.2	3.3	3.6
𝜉𝑝 (×10^7 V m^−1)	6.0125	3.6760	3.5666	3.5534	3.3656
𝑉𝐵 (V)	23.89	12.89	11.81	11.40	11.08
𝑉𝐴 (V)	16.34	6.67	6.06	4.37	4.07
𝑥𝐴 (μm)	0.354	0.210	0.204	0.166	0.162
𝑥𝐴/𝑊 (%)	45.39	31.82	31.86	25.94	24.55
𝜂 (%)	10.06	15.36	15.49	19.64	20.15
𝑓𝑝 (GHz)	106	94	96	95	94
𝐺𝑝 (×10^7 S m^−2)	4.6593	8.3760	10.594	10.441	11.790
𝐵𝑝 (×10^7 S m^−2)	17.320	12.252	9.0710	12.102	4.2031
𝑄𝑝 (= −𝐵𝑝/𝐺𝑝)	3.72	1.46	0.86	1.16	0.36
𝑍𝑅 (×10^−9 Ω m^2)	1.4484	3.8026	5.4463	4.0869	7.5254
𝑃RF (mW)	647.44	571.47	563.22	710.86	773.29
𝑣𝑛^2/𝑑𝑓; (×10^−16 V^2 sec)	39.51	3.75	1.85	1.39	0.82
NM (dB)	40.00	37.42	36.54	34.27	33.09