Modeling of the Channel Thickness Influence on Electrical Characteristics and Series Resistance in Gate-Recessed Nanoscale SOI MOSFETs

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</svg>) versus channel thickness for NSB devices and fitted by the model given by (<a href="https://static.hindawi.com/articles/apec/volume-2013/801634/figures/#EEq12">12</a>).</table>

Active and Passive Electronic Components

fig9

Figure 9

Figure 9: Modeling of the Channel Thickness Influence on Electrical Characteristics and Series Resistance in Gate-Recessed Nanoscale SOI MOSFETs 