Influence of Series Massive Resistance on Capacitance and Conductance Characteristics in Gate-Recessed Nanoscale SOI MOSFETs

Figure 1

(a) FIB cross-section of the Ultrathin Body Device (UTB) (46 nm channel thickness) showing the device structure including the source, gate, and drain regions. (b) Zoom-in of the layers below the gate region: 1; bulk silicon, 2; buried oxide, 3; silicon channel, 4; Nitride1/Gate Oxide, 5; polysilicon, 6; Silox2/Nitride2, and 7; FIB metal deposition.