Influence of Series Massive Resistance on Capacitance and Conductance Characteristics in Gate-Recessed Nanoscale SOI MOSFETs
Figure 3
(a) Spectrometer (FT750) map of the initial diameter SIMOX wafer showing the variation of the SOI thickness. (b) Map of diameter wafer cut from the edge of the previous wafer showing the variation of the thinned silicon channel.
