Influence of Series Massive Resistance on Capacitance and Conductance Characteristics in Gate-Recessed Nanoscale SOI MOSFETs
Figure 6
Parallel mode - and - characteristics for several channel thicknesses . Devices have the same gate area ( µm2 = cm2). (a) Capacitance () measured at 100 kHz. (b) Conductance measured at 100 kHz. (c) Capacitance () measured at 1 MHz. (d) Conductance measured at 1 MHz.
