Influence of Series Massive Resistance on Capacitance and Conductance Characteristics in Gate-Recessed Nanoscale SOI MOSFETs

<table class="table-group" width="800px"><tr class="fig-image" id="a"><td><img alt="813518.fig.009a" src="https://static.hindawi.com/articles/apec/volume-2013/813518/figures/813518.fig.009a.jpg"/></td></tr><tr class="fig-caption"><td align="center"><table><tr><td><b>(a) </b>Interface equivalent circuit</td></tr></table></td></tr><tr class="fig-image" id="b"><td><img alt="813518.fig.009b" src="https://static.hindawi.com/articles/apec/volume-2013/813518/figures/813518.fig.009b.jpg"/></td></tr><tr class="fig-caption"><td align="center"><table><tr><td><b>(b) </b>Parallel equivalent circuit</td></tr></table></td></tr></table>

<table>Parallel equivalent circuits modified for the interface trap capacitance <svg height="15.6875" id="M194" style="vertical-align:-3.39064pt" version="1.1" viewbox="0 0 19.4125 15.6875" width="19.4125" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
<g transform="matrix(.017,-0,0,-.017,.062,11.4)"><path d="M682 629q-1 -16 -1.5 -72t-2.5 -86l-31 -4q-5 92 -51 129t-139 37q-100 0 -177 -49t-116 -125t-39 -162q0 -122 66 -201t182 -79q83 0 137 42.5t112 128.5l26 -15q-12 -31 -42.5 -88t-45.5 -75q-139 -27 -199 -27q-148 0 -243 81.5t-95 226.5q0 173 129.5 274.5
t325.5 101.5q114 0 204 -38z" id="x1D436"></path></g>
<g transform="matrix(.012,-0,0,-.012,12.05,15.475)"><path d="M135 536q-20 0 -35 15.5t-15 35.5q0 22 15 37t36 15t35.5 -15t14.5 -37q0 -21 -15 -36t-36 -15zM252 0h-220v26q48 5 59 17t11 63v206q0 47 -9 58t-54 18v24q78 12 142 39v-345q0 -51 11.5 -63t59.5 -17v-26z" id="x69"></path></g><g transform="matrix(.012,-0,0,-.012,15.096,15.475)"><path d="M298 36l-68 -35q-25 -13 -42 -13q-98 0 -98 119v290h-69l-4 11l28 29h45v72l65 67l14 -2v-137h113q8 -8 6 -21t-12 -19h-107v-256q0 -96 59 -96q29 0 61 17z" id="x74"></path></g>
</svg>.</table>

Active and Passive Electronic Components

fig9

Figure 9

Figure 9: Influence of Series Massive Resistance on Capacitance and Conductance Characteristics in Gate-Recessed Nanoscale SOI MOSFETs 