Research Article

Influence of Series Massive Resistance on Capacitance and Conductance Characteristics in Gate-Recessed Nanoscale SOI MOSFETs

Table 3

Two-level factorial plan of the modeled values and for three factors: ( ) frequency, ( ) series resistance (according to NSB or UTB device), and ( ) interface trap densities. The channel length influence (100  m versus 8  m) is linked to the expected (actual) value. Leakage conductance is fixed to its low (actual) value 0.5 μS.

813518.tab.002