Circuit Implementation, Operation, and Simulation of Multivalued Nonvolatile Static Random Access Memory Using a Resistivity Change Device

<table>Simulation results for the recall operation. <svg height="15.4" id="M102" style="vertical-align:-3.39066pt" version="1.1" viewbox="0 0 21.0875 15.4" width="21.0875" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
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</svg> were fixed at 50, 100, and 65 kΩ, respectively.</table>

Active and Passive Electronic Components

fig9

Figure 9

Figure 9: Circuit Implementation, Operation, and Simulation of Multivalued Nonvolatile Static Random Access Memory Using a Resistivity Change Device 