Y-Function Analysis of the Low Temperature Behavior of Ultrathin Film FD SOI MOSFETs

Figure 3

Y-functions measured above the threshold domain (linear domain) for UTB (𝑡_Si = 46 nm) and GRC (𝑡_Si = 2.2 nm), for two low 𝑉_DS values (0.05 V and 0.1 V): (a): UTB, 𝑊/𝐿 = 80 μm/8 μm and 𝑇 = 300 K. (b): UTB, 𝑊/𝐿 = 80 μm/8 μm and 𝑇 = 77 K. (c): GRC, 𝑊/𝐿 = 80 μm/8 μm and 𝑇 = 300 K. (d): GRC, 𝑊/𝐿 = 80 μm/8 μm and 𝑇 = 77 K.

(a)

(b)

(c)

(d)