Y-Function Analysis of the Low Temperature Behavior of Ultrathin Film FD SOI MOSFETs
Figure 4
Modeled versus the gate voltage overdrive (), as extracted from the Y-function for UTB ( = 46 nm) and for GRC ( = 2.2 nm): (a): UTB, = 80 μm/8 μm and = 300 K. (b): UTB, = 80 μm/8 μm and = 77 K. (c): GRC, = 80 μm/8 μm and = 300 K. (d): GRC, = 80 μm/8 μm and = 77 K.
