Active and Passive Electronic Components

Research Article

Y-Function Analysis of the Low Temperature Behavior of Ultrathin Film FD SOI MOSFETs

Table 2

Summarizing table of the threshold voltage , the factor, and the low field mobility extracted from the -function intersections and slopes and for UTB and GRC devices at 300 K and 77 K. A third row of UTB/GRC indicative ratios was added to emphasize the parameters difference between the two devices, built in the same conditions and process.
  = 300 K = 77 K
  (V) ( S/V) (cm2/Vs) (V) ( S/V) (cm2/Vs)
UTB ( = 46 nm)−0.6514701210+0.2624102000
GRC ( = 2.2 nm)−2.35310.222−2.600.0070.005
Parameter ratio UTB/GRC0.2847.425,450−0.10344,286400,000