Y-Function Analysis of the Low Temperature Behavior of Ultrathin Film FD SOI MOSFETs

Table 3

Summarizing table of 𝑅_SD and 𝜃_1,0 values extracted from the 𝜃₁ versus 𝛽 relationship. A third row of, this time, GRC/UTB indicative ratios was added to emphasize the parameters difference between the two devices and the huge 𝑅_SD ratio differences, built in the same conditions and process.

	𝑇 = 300 K			𝑇 = 77 K
	𝑅SD (kΩ)	𝜃1,0 (V^−1)	𝑅SD 𝛽 (V^−1)	𝑅SD (kΩ)	𝜃1,0 (V^−1)	𝑅SD 𝛽 (V^−1)
UTB (𝑡Si = 46 nm)	0.103	0.0215	0.151	0.046	−0.019	0.11
GRC (𝑡Si = 2.2 nm)	1730	−0.176	0.530	8930	−0.146	0.06
Parameter ratio GRC/UTB	16,796	−8.19	3.51	194,130	7.68	0.54