Research Article
Usage and Limitation of Standard Mobility Models for TCAD Simulation of Nanoscaled FD-SOI MOSFETs
Figure 3
transfer characteristics (semilog) measured at V for UTB and NSB device having a channel thickness of 46 nm and 4.6 nm, respectively, and same ratio. The default beta mobility model used in the TCAD device simulator is added as an initial guess model.