Research Article
On the Evaluation of Gate Dielectrics for 4H-SiC Based Power MOSFETs
Figure 4
Gate current density as a function of gate bias for various gate dielectrics of thickness 5 nm, each at 300 K (a). Zoomed-in view over limited gate bias range is also shown with an electric field span of 6 to 12 MV/cm (b).
| (a) |
| (b) |