On the Evaluation of Gate Dielectrics for 4H-SiC Based Power MOSFETs

Figure 5

Gate current density at 300 K for different gate dielectric thicknesses using SiO₂ as a gate dielectric ((a), (b)) and Al₂O₃ as a gate dielectric ((c), (d)). Zoomed-in view is also shown for SiO₂ (b) and Al₂O₃ (d) at higher gate current densities.

(a)

(b)

(c)

(d)