On the Evaluation of Gate Dielectrics for 4H-SiC Based Power MOSFETs

Figure 6

Drain current density as a function of gate-source bias for various gate dielectrics using 20 nm thick dielectric material (a) and threshold voltage shift as a function of dielectric thickness for various gate dielectrics (b). Threshold voltages of Si₃N₄, Y₂O₃, and AlN are clustered with each other as a result of smaller difference in the bandgap of these materials. Simulations have been performed for 20 nm thick gate dielectric at 300 K.

(a)

(b)