Research Article
On the Evaluation of Gate Dielectrics for 4H-SiC Based Power MOSFETs
Table 3
Mobility parameters used in 4H-SiC based MOSFET device simulation.
| .caug | 40 | cm2/V⋅s | .caug | 950 | cm2/V⋅s | ncrn.caug | 2 × 1017 | cm−3 | .caug | 0.73 | Arbitrary | .caug | −0.76 | Arbitrary | .caug | 0 | Arbitrary | .caug | −2.4 | Arbitrary | .caug | 53.3 | cm2/V⋅s | .caug | 105.4 | cm2/V⋅s | .caug | 2.2 × 1018 | cm−3 | .caug | 0.7 | Arbitrary | .caug | 0 | Arbitrary | .caug | 0 | Arbitrary | .caug | −2.1 | Arbitrary | vsatn | 2 × 107 | cm2/s | vsatp | 2 × 107 | cm2/s | | 2 | — | | 1 | — |
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