On the Evaluation of Gate Dielectrics for 4H-SiC Based Power MOSFETs

Table 3

Mobility parameters used in 4H-SiC based MOSFET device simulation.

.caug	40	cm^2/V⋅s
.caug	950	cm^2/V⋅s
ncrn.caug	2 × 10^17	cm^−3
.caug	0.73	Arbitrary
.caug	−0.76	Arbitrary
.caug	0	Arbitrary
.caug	−2.4	Arbitrary
.caug	53.3	cm^2/V⋅s
.caug	105.4	cm^2/V⋅s
.caug	2.2 × 10^18	cm^−3
.caug	0.7	Arbitrary
.caug	0	Arbitrary
.caug	0	Arbitrary
.caug	−2.1	Arbitrary
vsatn	2 × 10^7	cm^2/s
vsatp	2 × 10^7	cm^2/s
	2	—
	1	—