Comprehensive Optimization of Dual Threshold Independent-Gate FinFET and SRAM Cells

<div>The cross section of the symmetric Independent-Gate High-K Metal gate FinFET with interfacial oxide between channel and high-k dielectric in TCAD simulation (NSD=1.0e20cm−3, Nbody=1.0e12cm−3, L=14nm, HFin=40nm).</div>

Active and Passive Electronic Components

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Figure 2

Figure 2: Comprehensive Optimization of Dual Threshold Independent-Gate FinFET and SRAM Cells 